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Hyperfast Rectifier. 20CTH03-1 Datasheet |
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Bulletin PD-20769 rev. A 08/03
20CTH03
20CTH03S
20CTH03-1
20CTH03FP
Hyperfast Rectifier
Features
• Hyperfast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
trr = 35ns max.
IF(AV) = 20Amp
VR = 300V
Description/ Applications
International Rectifier's 300V series are the state of the art Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and Hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
VRRM
IF(AV)
IFSM
TJ, TSTG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ TC = 135°C (FULLPACK)
@ TC = 160°C Per Diode
Per Diode
Per Device
Non Repetitive Peak Surge Current @ TJ = 25°C
Operating Junction and Storage Temperatures
Max
300
10
20
120
- 65 to 175
Units
V
A
°C
20CTH03
Case Styles
20CTH03S
20CTH03-1
20CTH03FP
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-220AB
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Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
D2PAK
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-262
2
1
Anode
Common
Cathode
3
Anode
TO-220 FULLPACK
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20CTH03, 20CTH03S, 20CTH03-1, 20CTH03FP
Bulletin PD-20769 rev. A 08/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBR, Vr
VF
Breakdown Voltage,
Blocking Voltage
Forward Voltage
IR Reverse Leakage Current
CT Junction Capacitance
LS Series Inductance
300 - -
V IR = 100µA
- 1.05 1.25 V
- 0.85 0.95 V
- - 20 µA
- 6 200 µA
- 30 - pF
- 8 - nH
IF = 10A, TJ = 25°C
IF = 10A, TJ = 125°C
VR = VR Rated
TJ = 125°C, VR = VR Rated
VR = 300V
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
trr Reverse Recovery Time
IRRM
Peak Recovery Current
Qrr Reverse Recovery Charge
- - 35 ns IF = 1A, diF/dt = 50A/µs, VR = 30V
- - 30
IF = 1A, diF/dt = 100A/µs, VR = 30V
- 31 -
TJ = 25°C
- 42 -
TJ = 125°C
IF = 10A
- 2.4 -
- 5.6 -
A TJ = 25°C
TJ = 125°C
diF/dt = 200A/µs
VR = 200V
- 36 - nC TJ = 25°C
- 120 -
TJ = 125°C
Thermal - Mechanical Characteristics
TJ
TStg
RthJC
Parameters
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Per Diode
Fullpack (Per Diode)
Min
-
- 65
-
-
Typ
-
-
-
-
Max
175
175
1.5
3.9
Units
°C
°C/W
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20CTH03, 20CTH03S, 20CTH03-1, 20CH03FP
Bulletin PD-20769 rev. A 08/03
100 100
Tj = 175˚C
150˚C
10
125˚C
1 100˚C
75˚C
0.1
50˚C
0.01 25˚C
Tj = 175˚C
0.001
50 100 150 200 250 300
Tj = 125˚C
Reverse Voltage - VR (V)
10 Fig. 2 - Typical Values of Reverse Current
Tj = 25˚C
Vs. Reverse Voltage
1000
T J= 25˚C
100
1
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
10
0 50 100 150 200 250 300
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1 D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
0.1 D = 0.01
PDM
t1
t2
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
0.01
0.00001
0.0001
0.001
0.01
2. Peak Tj = Pdm x ZthJC + Tc
0.1 1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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