IRF3805SPbF

PD - 97046A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings G TO-220AB IRF3805PbF ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage d Single Pulse Avalanche Energy h Single Pulse Avalanche Energy Tested Value Ù Avalanche Current g Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds i Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA www.irf.com Parameter k Junction-to-Case i Case-to-Sink, Flat Greased Surface ik Junction-to-Ambient jk Junction-to-Ambient (PCB Mount) IRF3805PbF IRF3805SPbF IRF3805LPbF HEXFET® Power MOS...