IRFIB5N50L

PD - 94522B SMPS MOSFET Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications IRFIB5N50L HEXFET® Power MOSFET 0.67Ω 73ns 4.7A VDSS RDS(on) typ. Trr typ. ID 500V Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Enhanced dv/dt capabilities offer improved ruggedness. Higher Gate voltage threshold offers improved noise immunity. Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V www.DataSheet4U.com TO-220 Full-Pak Max. 4.7 3.0 16 42 0.33 ±30 19 -55 to + 150 Units A W W/°C V V/ns °C IDM Pulsed Drain Current ™ PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and d Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 10lb in (1.1N m) x x Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 73 99 200 360 6.7 4.7 A 16 1.5 110 150 310 540 10 A V ns Conditions ...