IRFIB5N50LPBF

PD - 95390 IRFIB5N50LPbF SMPS MOSFET Applications Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID Telecom and Server Power Supplies 0.67Ω 500V 73ns 4.7A Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Enhanced dv/dt capabilities offer improved ruggedness. TO-220 Full-Pak Higher Gate voltage threshold offers improved noise immunity. Absolute Maximum Ratings ID @ TC = 25°C www.DataSheet4U.com HEXFET® Power MOSFET Parameter Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 4.7 3.0 16 42 0.33 ±30 13 -55 to + 150 Units A W W/°C V V/ns °C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM ™ PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and d Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 10lb in (1.1N m) x x Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 73 99 200 360 6.7 4.7 A 16 1.5 110 150 310 540 10 A V ns ...