IRFU1010ZPBF

PD - 95951 AUTOMOTIVE MOSFET Features l l l l l l IRFR1010ZPbF IRFU1010ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 7.5mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Parameter G S ID = 42A www.DataSheet4U.com D-Pak IRFR1010Z Max. 91 65 42 360 140 0.9 ± 20 I-Pak IRFU1010Z Units A ID @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) ID @ T C = 100°C Continuous Drain Current, V GS @ 10V ID @ T C = 25°C IDM Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current ™ P D @T C = 25°C Power Dissipation V GS E AS (Tested ) IAR E AR TJ T STG Linear Derating Factor Gate-to-Source Voltage W W/°C V mJ A mJ E AS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current d Ù h 110 220 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy Operating Junction ...