IRG4BC15UDPBF

PD - 95613 IRG4BC15UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching IGBT Co-packaged with ultra-soft-recovery antiparallel diode Industry standard TO-220AB package Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A Benefits • Best Value for Appliance and Industrial Applications High noise immune "Positive Only" gate driveNegative bias gate drive not necessary For Low EMI designs- requires little or no snubbing Single Package switch for bridge circuit applications Compatible with high voltage Gate Driver IC's Allows simpler gate drive www.DataSheet4U.com n-channel TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 14 7.8 42 42 4.0 16 ± 20 49 19 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Ca...