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BIPOLAR TRANSISTOR. IRG4BC15UDPBF Datasheet |
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www.DataSheet4U.com
PD - 95613
IRG4BC15UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
• IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
• Industry standard TO-220AB package
• Lead-Free
Benefits
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.02V
@VGE = 15V, IC = 7.8A
Best Value for Appliance and Industrial Applications
• High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
14
7.8
42
42
4.0
16
± 20
49
19
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.7
7.0
–––
80
–––
Units
°C/W
g (oz)
1
8/2/04
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IRG4BC15UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage –––
VCE(on)
Collector-to-Emitter Saturation Voltage –––
–––
–––
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
3.0
–––
4.1
–––
–––
VFM Diode Forward Voltage Drop
–––
–––
IGES Gate-to-Emitter Leakage Current –––
––– ––– V
0.63 ––– V/°C
2.02 2.4
2.56 ––– V
2.21 –––
––– 6.0
-10 ––– mV/°C
6.2 ––– S
––– 250 µA
––– 1400
1.5 1.8 V
1.4 1.7
––– ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 7.8A
VGE = 15V
IC = 14A
IC = 7.8A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 7.8A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 4.0A
IC = 4.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
––– 23 35
––– 4.0 6.0
––– 9.6 14
––– 17 –––
––– 20 –––
––– 160 240
––– 83 120
––– 0.24 –––
––– 0.26 –––
––– 0.50 0.63
––– 16 –––
––– 21 –––
––– 180 –––
––– 220 –––
––– 0.76 –––
––– 7.5 –––
––– 410 –––
––– 37 –––
––– 5.3 –––
––– 28 42
––– 38 57
––– 2.9 5.2
––– 3.7 6.7
––– 40 60
––– 70 110
––– 280 –––
––– 240 –––
nC
ns
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
IC = 7.8A
VCC = 400V
VGE = 15V
TJ = 25°C
IC = 7.8A, VCC = 480V
VGE = 15V, RG = 75Ω
Energy losses include "tail" and
diode reverse recovery.
TJ = 150°C,
IC = 7.8A, VCC = 480V
VGE = 15V, RG = 75Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
ƒ = 1.0MHz
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF = 4.0A
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di/dt 200A/µs
TJ = 125°C
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10
8
6
4
2
0
0.1
IRG4BC15UDPbF
60% of rated
voltage
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 11W
Ideal diodes
1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
10
1
0.1
0.1
TJ = 150 °C
TJ = 25 °C
VGE = 15V
20µs PULSE WIDTH
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
100
TJ = 150 °C
10
1 TJ = 25 °C
0.1
5.0
VCC = 50V
5µs PULSE WIDTH
10.0 15.0 20.0
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
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