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IRG4BC15UDPBF Datasheet, Equivalent, BIPOLAR TRANSISTOR.INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR |
| Part | IRG4BC15UDPBF |
|---|---|
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Feature | PD - 95613
IRG4BC15UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high frequencies from10 t o 30 kHz in hard switching • IGBT Co- packaged with ultra-soft-recovery antip arallel diode • Industry standard TO- 220AB package • Lead-Free C UltraFas t CoPack IGBT VCES = 600V G E VCE(on) typ. = 2. 02V @VGE = 15V, IC = 7. 8A Be nefits Best Value for Appliance and Industrial Applications • High noise immune "Positive Only" gate driveNegati ve bias gate drive not necessary • Fo r Low EMI designs- requires little or n o snubbing • Single Packag . |
| Manufacture | International Rectifier |
| Datasheet |
| Part | IRG4BC15UDPBF |
|---|---|
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Feature | PD - 95613
IRG4BC15UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high frequencies from10 t o 30 kHz in hard switching • IGBT Co- packaged with ultra-soft-recovery antip arallel diode • Industry standard TO- 220AB package • Lead-Free C UltraFas t CoPack IGBT VCES = 600V G E VCE(on) typ. = 2. 02V @VGE = 15V, IC = 7. 8A Be nefits Best Value for Appliance and Industrial Applications • High noise immune "Positive Only" gate driveNegati ve bias gate drive not necessary • Fo r Low EMI designs- requires little or n o snubbing • Single Packag . |
| Manufacture | International Rectifier |
| Datasheet |
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