Document
PD-95321
IRGIB6B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free.
C
VCES = 600V IC = 6.0A, TC=90°C
G E
tsc > 10µs, TJ=175°C
n-channel
VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
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TO-220 Full-Pak
Max.
600 11 7.0 22 22 9.0 6.0 18 2500 ±20 38 19 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V A
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation
Units
V
PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
––– ––– ––– ––– –––
Typ.
––– ––– 0.50 ––– 2.0
Max.
3.9 6.0 ––– 62 –––
Units
°C/W
g
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1
05/25/04
IRGIB6B60KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
— 0.30 1.80 2.20 2.30 4.5 -10 3.0 1.0 200 720 1.25 1.20 1.15 —
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — VCE(on) Collector-to-Emitter Voltage 1.50 — — VGE(th) Gate Threshold Voltage 3.5 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — gfe Forward Transconductance — ICES Zero Gate Voltage Collector Current — — — VFM Diode Forward Voltage Drop — — — IGES Gate-to-Emitter Leakage Current —
— V VGE = 0V, IC = 500µA — V/°C VGE = 0V, IC = 1mA (25°C-150°C) 2.20 V IC = 5A, VGE = 15V, TJ = 25°C IC = 5A, VGE = 15V, TJ = 150°C 2.50 IC = 5A, VGE = 15V, TJ = 175°C 2.60 5.5 V VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 1mA (25°C-150°C) — S VCE = 50V, IC = 5.0A, PW = 80µs 150 µA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C 500 VGE = 0V, VCE = 600V, TJ = 175°C 1100 1.45 V IF = 5.0A, VGE = 0V IF = 5.0A, VGE = 0V, TJ = 150°C 1.40 IF = 5.0A, VGE = 0V, TJ = 175°C 1.35 ±100 nA VGE = ±20V, VCE = 0V
5,6,7
9,10,11 9,10,11 12
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf LE Cies Coes Cres RBSOA SCSOA ISC (PEAK) Erec trr Irr Qrr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Peak Short Circuit Collector Current Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Diode Reverse Recovery Charge
Min. Typ. Max. Units
— 18.2 27.3 — 1.9 2.85 — 9.2 13.8 — 110 210 — 135 245 — 245 455 — 25 34 — 17 26 — 215 230 — 13.2 22 — 150 260 — 190 300 — 340 560 — 28 37 — 17 26 — 240 255 — 18 27 — 7.5 — — 290 435 — 34 51 — 10 15 FULL SQUARE 10 — — — — — — 50 90 70 10 350 — — 175 91 13 455 nC
Conditions
IC = 5.0A VCC = 400V VGE = 15V IC = 5.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 1.4mH Ls= 150nH, TJ = 25°C IC = 5.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 1.4mH Ls= 150nH, TJ = 25°C IC = 5.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 1.4mH Ls= 150nH, TJ = 150°C IC = 5.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 1.4mH Ls= 150nH, TJ = 150°C Measured 5 mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 150°C, IC = 18A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 100Ω
Ref.Fig.
23 CT1
CT4
µJ
ns
CT4
CT4 13,15 WF1,WF2 14,16 CT4 WF1 WF2
µJ
ns
nH pF
22
4 CT2 CT3 WF4 WF4
µs A µJ ns A nC
TJ = 150°C, Vp = 600V, RG = 100Ω VCC=360V,VGE = +15V to 0V
TJ = 150°C VCC = 400V, IF = 5.0A, L = 1.4mH VGE = 15V, RG = 100Ω, Ls= 150nH di/dt = 400A/µs
17,18,19 20,21 CT4,WF3
Vcc =80% (VCES), VGE = 20V, L =100µH, RG = 50Ω. Energy losses include "tail" and diode reverse recovery.
2
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IRGIB6B60KDPbF
12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 T C (°.