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IRGIB6B60KDPBF Dataheets PDF



Part Number IRGIB6B60KDPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGIB6B60KDPBF DatasheetIRGIB6B60KDPBF Datasheet (PDF)

PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free. C VCES = 600V IC = 6.0A, TC=90°C G E tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performa.

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PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free. C VCES = 600V IC = 6.0A, TC=90°C G E tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings www.DataSheet4U.com TO-220 Full-Pak Max. 600 11 7.0 22 22 9.0 6.0 18 2500 ±20 38 19 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V A Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation Units V PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– 2.0 Max. 3.9 6.0 ––– 62 ––– Units °C/W g www.irf.com 1 05/25/04 IRGIB6B60KDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units — 0.30 1.80 2.20 2.30 4.5 -10 3.0 1.0 200 720 1.25 1.20 1.15 — Conditions Ref.Fig. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — VCE(on) Collector-to-Emitter Voltage 1.50 — — VGE(th) Gate Threshold Voltage 3.5 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — gfe Forward Transconductance — ICES Zero Gate Voltage Collector Current — — — VFM Diode Forward Voltage Drop — — — IGES Gate-to-Emitter Leakage Current — — V VGE = 0V, IC = 500µA — V/°C VGE = 0V, IC = 1mA (25°C-150°C) 2.20 V IC = 5A, VGE = 15V, TJ = 25°C IC = 5A, VGE = 15V, TJ = 150°C 2.50 IC = 5A, VGE = 15V, TJ = 175°C 2.60 5.5 V VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 1mA (25°C-150°C) — S VCE = 50V, IC = 5.0A, PW = 80µs 150 µA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C 500 VGE = 0V, VCE = 600V, TJ = 175°C 1100 1.45 V IF = 5.0A, VGE = 0V IF = 5.0A, VGE = 0V, TJ = 150°C 1.40 IF = 5.0A, VGE = 0V, TJ = 175°C 1.35 ±100 nA VGE = ±20V, VCE = 0V 5,6,7 9,10,11 9,10,11 12 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf LE Cies Coes Cres RBSOA SCSOA ISC (PEAK) Erec trr Irr Qrr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Peak Short Circuit Collector Current Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Diode Reverse Recovery Charge Min. Typ. Max. Units — 18.2 27.3 — 1.9 2.85 — 9.2 13.8 — 110 210 — 135 245 — 245 455 — 25 34 — 17 26 — 215 230 — 13.2 22 — 150 260 — 190 300 — 340 560 — 28 37 — 17 26 — 240 255 — 18 27 — 7.5 — — 290 435 — 34 51 — 10 15 FULL SQUARE 10 — — — — — — 50 90 70 10 350 — — 175 91 13 455 nC Conditions IC = 5.0A VCC = 400V VGE = 15V IC = 5.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 1.4mH Ls= 150nH, TJ = 25°C IC = 5.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 1.4mH Ls= 150nH, TJ = 25°C IC = 5.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 1.4mH Ls= 150nH, TJ = 150°C IC = 5.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 1.4mH Ls= 150nH, TJ = 150°C Measured 5 mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 150°C, IC = 18A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 100Ω Ref.Fig. 23 CT1 CT4 µJ ns CT4 CT4 13,15 WF1,WF2 14,16 CT4 WF1 WF2 µJ ns nH pF 22 4 CT2 CT3 WF4 WF4 µs A µJ ns A nC TJ = 150°C, Vp = 600V, RG = 100Ω VCC=360V,VGE = +15V to 0V TJ = 150°C VCC = 400V, IF = 5.0A, L = 1.4mH VGE = 15V, RG = 100Ω, Ls= 150nH di/dt = 400A/µs 17,18,19 20,21 CT4,WF3 Vcc =80% (VCES), VGE = 20V, L =100µH, RG = 50Ω. Energy losses include "tail" and diode reverse recovery. 2 www.irf.com IRGIB6B60KDPbF 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 T C (°.


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