PD - 94620B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.
IRGIB7B60KD
C
VCES = 600V IC = 8.0A, TC=100°C
G E
tsc > 10µs, TJ=150°C
n-...
