IRGPC20K

PD - 9.1129 IRGPC20K INSULATED GATE BIPOLAR TRANSISTOR Features Short circuit rated - 10µs @ 125°C, VGE = 15V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(sat) ≤ 3.5V @VGE = 15V, IC = 6.0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. www.DataSheet4U.com TO -2 4 7 AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C I CM ILM tsc VGE EARV PD @ T C = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 10 6.0 20 20 10 ±20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) fr...