SSP3N90A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 4.679 Ω (Typ.) 1 2 3 SSP3N90A BVDSS = 900 V RDS(on) = 6.2 Ω ID = 3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM www.DataSheet4U.com Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds Ο Ο Ο Value 900 3 1.9 1 O Units V A A V mJ A mJ V/ns W W/ C Ο VGS EAS IAR EAR dv/dt PD TJ , TSTG TL 12 + _ 30 286 3 10 1.5 100 0.8 - 55 to +150 O 1 O 1 O 3 O 2 Ο C 300 Thermal Resistance Symbol R R R θJC θCS θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 1.25 -62.5 Units Ο C /W Rev. B ©1999 Fairchild Semiconductor Corporation SSP3N90A Electrical Characteristics (TC=25 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source L...