SOT323 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
ISSUE 2 – MARCH 2007 FEATURES * Extremely low saturation voltage *...
SOT323
NPN SILICON PLANAR HIGH PERFORMANCE
TRANSISTOR
ISSUE 2 – MARCH 2007 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current (IC) APPLICATIONS * Ideally suited for space / weight critical applications
ZUMT491
C
E
B SOT323
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb =25°C
www.DataSheet4U.com
SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j :T stg
VALUE 80 60 5 2 1 200 500 -55 to +150
UNIT V V V A A mA mW °C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Turn On Voltage SYMBOL V (BR)CBO V CEO(sus) V (BR)EBO I CBO I CES I EBO V CE(sat) V BE(sat) V BE(on) MIN. 80 60 5 100 100 100 0.25 0.50 1.1 1.0 TYP. MAX. UNIT V V V nA nA nA V V V V CONDITIONS. I C =100 µ A, I E =0 I C =10mA*, I B =0 I E =100 µ A, I C =0 V CB =60V VCE=60V V EB =4V, I C =0 I C =500mA, I B =50mA* I C =1A, I B =100mA* I C =1A, I B =100mA* IC=1A, V CE =5V*
* Measured under pulsed conditions. Pulse width 300µS. Duty cycle Յ2%.
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