ZXMN6A25K

ZXMN6A25K 60V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS 60 0.070 @ VGS= 4.5V 9 RDS(on) (⍀) 0.050 @ VGS= 10V ID (A) 10.7 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features www.DataSheet4U.com D Low on-resistance Fast switching speed Low gate drive DPAK package G S Applications DC-DC converters Power management functions Disconnect switches Motor control D Ordering information D Device ZXMN6A25KTC Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 G S Pinout - top view Device marking ZXMN 6A25 Issue 3 - Novmber 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN6A25K Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 10V; Tamb=25°C(b) @ VGS= 10V; Tamb=70°C(b) @ VGS= 10V; Tamb=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD IDM IS ISM PD Symbol VDSS VGS ID Limit 60 ±20 10.7 8.6 7 36 11.8 36 4.25 34 9.85 78.7 2.11 16.8 -55 to +150 Unit V V A A A A A A W mW/°C W mW/°C W mW/°C °C Thermal resistance P...