ZXMN6A25G

ZXMN6A25G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (⍀) 0.050 @ VGS = 10V 0.070 @ VGS = 4.5V ID (A) 6.7 5.7 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. D G S Features www.DataSheet4U.com Low on-resistance Fast switching speed Low gate drive SOT223 package Applications DC-DC converters Power management functions Disconnect switches Motor control S D D G Pinout - top view Tape width (mm) 12 Quantity per reel 1,000 Ordering information Device ZXMN6A25GTA Reel size (inches) 7 Device marking ZXMN 6A25 Issue 2 - November 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN6A25G Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS = 10V; Tamb = 25°C(b) @ VGS = 10V; Tamb = 70°C(b) @ VGS = 10V; Tamb = 25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb = 25°C(a) Linear derating factor Power dissipation at Tamb = 25°C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 60 ±20 6.7 5.4 4.8 28.5 5.7 28.5 2 16 3.9 31 -55 to +150 Unit V V A A A A A A W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient Junction to ambient Symbol R⍜JA R⍜JA L...