ZXMP6A16K

ZXMP6A16K 60V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS -60 RDS(on) (⍀) 0.085 @ VGS= -10V 0.125 @ VGS= -4.5V ID (A) 8.2 6.75 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. D G Features www.DataSheet4U.com S Low on-resistance Fast switching speed Low threshold Low gate drive DPAK package S D N/C G Pinout - top view Applications DC-DC converters Power management functions Disconnect switches Motor control Ordering information Device ZXMP6A16KTC Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2500 Device marking ZXMP 6A16 Issue 2 - November 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMP6A16K Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 10V; Tamb=25°C(b) @ VGS= 10V; Tamb=70°C(b) @ VGS= 10V; Tamb=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD IDM IS ISM PD Symbol VDSS VGS ID Limit -60 ± 20 8.2 6.5 5.4 27.2 10 27.2 4.24 33.9 9.76 78 2.11 16.8 -55 to +150 A A A W mW/°C W mW/°C W mW/°C °C Unit V V A ...