IGBT
APT75GP120B2
1200V
POWER MOS 7 IGBT
T-MaxTM
®
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. ...
Description
APT75GP120B2
1200V
POWER MOS 7 IGBT
T-MaxTM
®
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G
C
Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff
100 kHz operation @ 800V, 20A 50 kHz operation @ 800V, 38A RBSOA rated
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE
www.DataSheet4U.com
All Ratings: TC = 25°C unless otherwise specified.
APT75GP120B2 UNIT
Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1 7
1200 ±20 ±30 100 91 300 300A @ 960V 1042 -55 to 150 300
Watts °C Amps Volts
VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL
@ TC = 25°C
Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000µA) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25°C) MIN TYP MAX UNIT
1200 3 4.5 3.3 3.0 1000
2
6 3.9
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 1...
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