APT8M100S

APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. TO -2 47 D3PAK APT8M100B Single die MOSFET APT8M100S D G S FEATURES Fast switching with low EMI/RFI Low RDS(on) Ultra low Crss for improved noise immunity Low gate charge Avalanche energy rated RoHS compliant TYPICAL APPLICATIONS PFC and other boost converter Buck converter Two switch forward (asymmetrical bridge) Single switch forward Flyback Inverters www.DataSheet4U.com Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 8 5 27 ±30 415 4 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to ...