SS8050

NPN General Purpose Transistors P b Lead(Pb)-Free SS8050 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Collector-Base Voltage Symbol VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current-Continuous IC Total Device Dissipation TA=25°C Junction and Storage, Temperature PD TJ,Tstg Value 40 25 5 1.5 1.0 -55 to +150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25˚C unless otherwise noted) Characteristics Symbol Min Collector-Base Breakdown Voltage IC=100µA, IE=0 Collector-Emitter Breakdown Voltage IC=0.1mA, IB=0 Emitter Base Breakdown Voltage IE=100µA, IC=0 Collector cut-off current VCB=40V, IE=0 Emitter cut-off current VCE=20V, IE=0 Emitter cut-off current VEB=5V, IC=0 V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO 40 25 5 - - Typ - - - Max - Unit V V -V 0.1 µA 0.1 µA 0.1 µA WEITRON http://www.weitron.com.tw 1/4 28-Nov-2013 SS8050 ON CHARACTERISTICS DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=800 mA Collector-Emitter Saturation Voltage IC=800mA, IB=80mA Base-Emitter Saturation Voltage IC=800mA, IB=80mA Base-Emitter ON Voltage VCE=1V, IC=10mA) hFE(1) hFE(2) VCE(sat) VBE(sat) VBE(ON) 85 40 - - - 400 - - - 0.5 V - 1.2 V - 1V DYNAMIC CHARACTERISTICS Transition frequency VCE=10 V, IC=50 mA, f=30MHz fT 100 - - MHz CLASSIFICATION OF hFE(1) Rank B Range 85-160 C 120-200 D 160-300 E 300-400 WEITRON http://www.weitron.com.tw 2/4 28-Nov-2013 COLLECTOR CURRENT I (mA...