SS8050LT1

SS8050LT1 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 www.DataSheet4U.com SS8050LT1=Y1 0.1 100 100 25 40 6.0 ) E=20 Vdc, I E= 0 40 5.0 O 0.1 0.1 0.1 u u u WEITRON http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=1.0 Vdc) (IC=800 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage (IC=800 mAdc, IB=80mAdc) Base-Emitter Saturation Voltage (IC=800 mAdc, IB=80mAdc) hFE (1) hFE (2) VCE(sat) VBE(sat) 120 40 350 0.5 1.2 Vdc Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=50 mAdc, VCE=10 Vdc, f=30MHz) fT 100 MHz CLASSIFICATION OF hFE(1) Rank Range L 120-200 H 200-350 WEITRON http://www.weitron.com.tw SS8050LT1 I C , CO LLECTOR CURRENT (mA) 0.5 1000 VCE = 1V IB = 3.0mA 0.4 IB = 2.5mA 0.3 hFE, DC CURRENT GAIN 2.0 100 IB = 2.0mA IB = 1.5mA 0.2 10 IB = 1.0mA 0.1 IB = 0.5mA 1 0.1 0 0.4 0.8 1.2 1.6 1 10 100 1000 FIG.1 Static Characteristic VCE , C OLLECTOR-EMITTER VOLTAGE (VoLTS) I C , COLLECTOR CURRENT (mA) FIG.2 DC Current Gain VBE(s at), VCE(s at) , SATURATION VOLTAGE (mA) 10000 100 IC = 10 IB I C , COLLECTOR CURRENT (mA) VCE = 1V V BE(sat) 1000 10 100 1 V CE(sat) 10 0.1 1 10 100 1000 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I C , COLL ECTOR CURRENT (mA) VBE, BASE- EMITTER VOLTAGE (VoLTS) FIG.3 Base-...