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ZXTN25100DFH

Zetex Semiconductors

NPN medium power transistor

ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(s...


Zetex Semiconductors

ZXTN25100DFH

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ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH Description Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. www.DataSheet4U.com C B Features High power dissipation SOT23 package High gain Low saturation voltage 180V forward blocking voltage 6V reverse blocking voltage E Application Motor control DC fans DC-DC converters Lamp, relay, and solenoid driving E C B Pinout - top view Ordering information Device ZXTN25100DFHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Device marking 1B5 Issue 1 - June 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25100DFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb Linear derating factor Power dissipation at Tamb Linear derating factor Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Tj, Tstg ...




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