APT1001R6BFLL

Typical Performance Curves APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL 1000V 8A 1.60Ω D3PAK POWER MOS 7 ® R FREDFET TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM www.DataSheet4U.com Increased Power Dissipation Easier To Drive TO-247 or Surface Mount D3PAK Package FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25°C unless otherwise specified. APT1001R6BFLL_SFLL UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 1000 8 32 ±30 ±40 266 2.13 -55 to 150 300 4 16 4 VGS VGSM PD TJ,TSTG TL IAR EAR EAS Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 425 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Dr...