ARF466B

D G S TO-264 ARF466A ARF466B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized for both linear and high efficiency classes of operation. Specified 150 Volt, 40.68 MHz Characteristics: Output Power = 300 Watts. Gain = 16dB (Class AB) Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS www.DataSheet4U.com Low Cost Common Source RF Package. Low Vth thermal coefficient. Low Thermal Resistance. Optimized SOA for Superior Ruggedness. All Ratings: TC = 25°C unless otherwise specified. ARF466A_B UNIT Volts Amps Volts Watts °C/W °C Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1000 1000 13 ±30 357 0.35 -55 to 150 300 VDGO ID VGS PD RθJC TJ,TSTG TL STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS g fs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) Drain-Source On-State Resistance 1 MIN TYP MAX UNIT Volts 1000 0.90 25 250 ±100 3.3 2 7 9 4 (VGS = 10V, ID = 6.5A) ohms µA nA mhos Volts 8-2005 050-4925 Rev C Zero Gate Voltage Drain Cur...