ZXMN10A11K

ZXMN10A11K 100V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS 100 RDS(on) (⍀) 0.350 @ VGS= 10V 0.450 @ VGS= 6V ID (A) 3.5 3.1 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. D G S Features www.DataSheet4U.com Low on-resistance Fast switching speed Low threshold Low gate drive DPAK package D Applications DC-DC converters Power management functions Disconnect switches Motor control D G S Pinout - top view Ordering information Device ZXMN10A11KTC Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 Device marking ZXMN 10A11 Issue 1 - August 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN10A11K Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 10V; Tamb=25°C(b) @ VGS= 10V; Tamb=70°C(b) @ VGS= 10V; Tamb=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD IDM IS ISM PD Symbol VDSS VGS ID Limit 100 ±20 3.5 2.8 2.4 9.9 8.35 9.9 4.06 32.4 8.5 68 2.11 16.8 -55 to +150 A A A W mW/°C W mW/°C W mW/°C °C Unit V V A Ther...