N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10B08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.230 DESCRIPTION
ID = 1.9A
Thi...
Description
ZXMN10B08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.230 DESCRIPTION
ID = 1.9A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance Fast switching speed Low threshold Low gate drive SOT23-6 package
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SOT23-6
APPLICATIONS
DC - DC Converters Power Management Functions Disconnect switches Motor control
ORDERING INFORMATION
DEVICE ZXMN10B08E6TA ZXMN10B08E6TC REEL SIZE 7” 13” TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units
PINOUT
DEVICE MARKING
10B8
Top View
ISSUE 1 - OCTOBER 2005 1
SEMICONDUCTORS
ZXMN10B08E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 100 20 1.9 1.5 1.6 9 2.5 9 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A
I DM IS I SM PD PD T j :T stg
A A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ ...
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