ZXMN2B01F

ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (⍀) 0.100 @ VGS= 4.5V 20 0.150 @ VGS= 2.5V 0.200 @ VGS= 1.8V ID (A) 2.4 2.0 1.7 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive. Features www.DataSheet4U.com D Low on-resistance Fast switching speed Low gate drive capability SOT23 package G S Applications DC-DC converters Power management functions Disconnect switches Motor control S D G Ordering information Device ZXMN2B01FTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel Top view 3,000 Device marking 2B1 Issue 2 - March 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXMN2B01F Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 4.5V; Tamb=25°C(b) @ VGS= 4.5V; Tamb=70°C(b) @ VGS= 4.5V; Tamb=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 20 ±8 2.4 1.9 2.1 11.8 1.4 11.8 625 5 806 6.4 -55 to +150 Unit V V A A A A A A mW mW/°C mW mW/°C °C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R⍜JA R⍜JA Limit 200 155 Unit °C/W °C/W NOTES: (a) For a device surfac...