ZXMN6A09K

ZXMN6A09K 60V N-channel enhancement mode MOSFET in DPAK Summary V(BR)DSS=60V : RDS(on)=0.040⍀; ID=12.2A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features www.DataSheet4U.com D Low on-resistance Fast switching speed Low threshold Low gate drive DPAK (T0-252) package G S Applications DC-DC converters Power management functions Disconnect switches Motor control D D Ordering information Device ZXMN6A09KTC Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2500 G S Pinout - top view Device marking ZXMN 6A09K Issue 5 - January 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXMN6A09K Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS=10V; Tamb=25°C(b) @ VGS=10V; Tamb=70°C(b) @ VGS=10V; Tamb=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD IDM IS ISM PD Symbol VDSS VGS ID Limit 60 ±20 12.2 9.8 7.9 43 10.8 43 4.3 34.4 10.1 80.8 2.15 17.2 -55 to +150 A A A W mW/°C W mW/°C W mW/°C °C Unit V V ...