ZXMN7A11G

ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V : RDS(on)=0.13⍀ ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features www.DataSheet4U.com D Low on-resistance Fast switching speed Low threshold Low gate drive SOT223 package G S Applications DC-DC converters Power management functions Disconnect switches Motor control Class D audio output stages Ordering information Device ZXMN7A11GTA ZXMN7A11GTC Reel size (inches) 7 13 Tape width (mm) 12 12 Quantity per reel 1,000 4,000 Device marking ZXMN 7A11 Issue 1 - March 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN7A11G Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS=10V; TA=25°C(b) @ VGS=10V; TA=70°C(b) @ VGS=10V; TA=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at TA =25°C (a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating factor Operating and storage temperature range IDM IS ISM PD Symbol VDSS VGS ID Limit 70 ±20 3.8 3.0 2.7 10 5 10 2 16 3.9 31 -55 to +150 Unit V V A A A A A A W mW/°C W mW/°C °C PD Tj, Tstg Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R⍜JA R⍜J...