ZXMP10A16K

ZXMP10A16K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS -100 RDS(on) (⍀) 0.235 @ VGS= -10V 0.285 @ VGS= -6V ID (A) 4.6 4.2 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. D G Features www.DataSheet4U.com S Low on-resistance Fast switching speed Low threshold Low gate drive DPAK package D Applications DC-DC converters Power management functions Disconnect switches Motor control D G S Pinout - top view Ordering information Device ZXMP10A16KTC Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2500 Device marking ZXMP 10A16 Issue 1 - October 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMP10A16K Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 10V; Tamb=25°C(b) @ VGS= 10V; Tamb=70°C(b) @ VGS= 10V; Tamb=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD IDM IS ISM PD Symbol VDSS VGS ID Limit -100 ±20 4.6 3.7 3 15.4 10.6 15.4 4.24 34 9.76 78 2.15 16.8 -55 to +150 A A A W mW/°C W mW/°C W mW/°C °C Unit V V A T...