ZXTN07012EFF

ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC(cont) = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description This low voltage NPN transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. www.DataSheet4U.com C B Features Low profile SOT23F package Low saturation voltage High gain High power dissipation E E C B Pinout - top view Applications LED driver Boost converter Logic interface Motor drive Ordering information Device ZXTN07012EFFTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Device marking 1D3 Issue 1 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN07012EFF Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Power dissipation at Tamb =25°C(c) Linear derating factor Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range PD Tj, Tstg PD PD PD Symbol VCBO VCEO VECO VEBO IC IB...