ZXTN25012EFL 12V, SOT23, NPN low power transistor
Summary
BVCEO > 12V BVECO > 4.5V hFE > 500 IC(cont) = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW
Description
Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.
C
B
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