ZXTN25040DFL

ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC(cont) = 1.5A VCE(sat) < 85mV @ 1A RCE(sat) = 59m⍀ PD = 350mW Complementary part number ZXTP25040DFL Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. www.DataSheet4U.com C B Features High peak current Low saturation voltage 130V forward blocking voltage 6V reverse blocking voltage E Applications MOSFET and IGBT gate driving DC-DC conversion LED driving Interface between low voltage IC's and loads E C B Pinout - top view Ordering information Device ZXTN25040DFLTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Device marking 1B7 Issue 2 - January 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTN25040DFL Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(a) Base current Peak pulse current Power dissipation at Tamb = 25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEX VCEO VECO VEBO IC IB ICM PD Limit 130 130 40 6 7 1.5 0.5 6 350 2.8 -55 to 150 Unit V V V V V A A A mW mW/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R⍜JA Limit 357 Unit °C/W NOTES: (a) For a device surface mounted on 25mm...