ZXTP25020DFL

ZXTP25020DFL 20V, SOT23, PNP low power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 1.5A VCE(sat) < 85 mV @ 1A RCE(sat) = 54m⍀ PD = 350mW Complementary part number ZXTN25020DFL Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. C B Features www.DataSheet4U.com High peak current Low saturation voltage E Applications DC-DC converters MOSFET and IGBT gate driving E C B Ordering information Device ZXTP25020DFLTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Pinout - top view Device marking 1F2 Issue 1 - January 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTP25020DFL Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current Base current Peak pulse current Power dissipation at Tamb =25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VECO VEBO IC IB ICM PD Limit -25 -20 -4 -7 -1.5 -500 -6 350 2.8 -55 to 150 Unit V V V V A mA A mW mW/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R⍜JA Limit 357 Unit °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - January 2007 © Zetex Semiconductors plc 2007 2 www.zete...