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ZXTP25140BFH Dataheets PDF



Part Number ZXTP25140BFH
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description PNP Transistor
Datasheet ZXTP25140BFH DatasheetZXTP25140BFH Datasheet (PDF)

ZXTP25140BFH 140V, SOT23, PNP medium power transistor Summary BV(BR)CEX > -180V; BV(BR)CEO > -140V BV(BR)ECO > -7V ; IC(cont) = -1A Rce(sat) = 180 m⍀ typical Vce(sat) < -260mV @ 1A ; PD = 1.25W Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. C B Features www.DataSheet4U.com •.

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ZXTP25140BFH 140V, SOT23, PNP medium power transistor Summary BV(BR)CEX > -180V; BV(BR)CEO > -140V BV(BR)ECO > -7V ; IC(cont) = -1A Rce(sat) = 180 m⍀ typical Vce(sat) < -260mV @ 1A ; PD = 1.25W Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. C B Features www.DataSheet4U.com • • • High power dissipation SOT23 package 180V forward blocking voltage Low saturation voltage E Applications • • DC-DC converters High side switching Ordering information Device ZXTP25140BFHTA Reel size (inches) 7 Tape width 8mm Quantity per reel 3,000 Pinout - top view Device marking 026 Issue 1 - March 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTP25140BFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at TA=25°C (a) Linear derating factor Power dissipation at TA=25°C (b) Linear derating factor Power dissipation at TA=25°C (c) Linear derating factor Power dissipation at TA=25°C (d) Linear derating factor Operating and storage temperature range Symbol VCBO VCEX VCEO VECO VEBO IC ICM PD Limit -180 -180 -140 -7 -7 -1 -3 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 -55 to 150 Unit V V V V V A A W mW/°C W mW/°C W mW/°C W mW/°C °C PD PD PD Tj, Tstg Thermal resistance Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Junction to ambient (d) Symbol R⍜JA R⍜JA R⍜JA R⍜JA Limit 171 119 100 69 Unit °C/W °C/W °C/W °C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - March 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTP25140BFH Characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTP25140BFH Electrical characteristics (at TAMB = 25°C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-base breakdown voltage Collector cut-off current Collector emitter cut-off current Emitter cut-off current Collector-emitter saturation voltage Symbol BVCBO BVCEX, Min. -180 -180 Typ. -205 -205 Max. Unit V V Conditions IC = -100␮A IC = -100␮A, RBE Յ 1k⍀ or -0.25V < VBE < 1V IC = -10mA (*) IE = -100uA (*) IE = -100␮A VCB = -144V VCB = -144V, TAMB= 100°C VCE = -144V; RBE Յ 1k⍀ or -0.25V < VBE < 1V VEB = -5.6V IC = -0.1A, IB = -10mA (*) IC = -0.1A, IB = -2mA (*) IC = -0.5A, IB = -50mA (*) IC = -0.5A, IB = -25mA (*) IC = -1A, IB = -100mA (*) IC = -1A, IB = -100mA (*) IC = -1A, VCE = -2V (*) IC = -10mA, VCE = -2V (*) IC = -0.1A, VCE = -2V (*) IC = -1A, VCE = -2V (*) MHz pF ns ns IC = -10mA, VCE = -20V f = 20MHz VCB = -20V, f = 1MHz (*) VCC = -20V. IC = -100mA, IB1 = IB2= -10mA BVCEO -140 -160 V BVECO -7 -8.5 V BVEBO ICBO ICEX -7 -8.2 <-1 -50 -20 -100 V nA ␮A nA IEBO Vce(sat) <-1 -40 -110 -90 -170 -180 -50 -50 -135 -110 -230 -260 -950 -900 300 nA mV mV mV mV mV mV mV Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio Vbe(sat) VBE(ON) hFE 100 100 20 -850 -800 200 190 30 75 10 102 854 Transition frequency Output capacitance Turn-on time Turn-off time fT COBO t(on) t(off) NOTES: (*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%. Issue 1 - March 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTP25140BFH Typical characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTP25140BFH Package outline - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] A.


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