BUV26

BUV26 Switch‐mode Series NPN Silicon Power Transistor Designed for high−speed applications. Features Switch-mode Power Supplies High Frequency Converters Relay Drivers Driver These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO(sus) 90 Vdc Collector−Base Voltage VCBO 180 Vdc Emitter−Base Voltage VEBO 7.0 Vdc Collector Current − Continuous IC 20 Adc Collector Current − Peak (pw 10 ms) ICM 30 Adc Base Current − Continuous IB 4.0 Adc Base Current − Peak IBM 6.0 Adc Total Power Dissipation @ TC = 25°C PD Total Power Dissipation @ TC = 60°C PD 85 W 65 W Operating and Storage Junction Temperature Range TJ, Tstg −  65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.76 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 November, 2014 − Rev. 6 www.onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS, 85 WATTS SCHEMATIC COLLECTOR 2,4 1 BASE 3 EMITTER MARK...