ZUMT2222A

SOT323 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 1 – NOVEMBER 1998 FEATURES * Fast switching PARTMARKING DETAIL COMPLEMENTARY TYPE – T16 – ZUMT2907A ZUMT2222A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg MAX. UNIT V V V 10 10 10 10 0.3 1.0 0.6 35 50 75 35 100 50 40 1.2 2.0 nA µA nA nA V V V V VALUE 75 40 6 600 330 -55 to +150 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). www.DataSheet4U.com PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICEX VCE(sat) VBE(sat) hFE MIN. 75 40 6 CONDITIONS. IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VCB=60V, IE=0, Tamb=150°C VEB=3V, IC=0 VCE=60V, VEB(off)=3V IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=0.1mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=10mA, VCE=10V, Tamb=-55°C IC=150mA, VCE=10V* IC=150mA, VCE=1V* IC=500mA, VCE=10V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for...