COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A17DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-C...
Description
ZXMC3A17DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
SO8
FEATURES
Low on-resistance Fast switching speed Low threshold Low gate drive
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Low profile SOIC package
APPLICATIONS
Motor drive LCD backlighting
Q1 = N-channel
Q2 = P-channel
ORDERING INFORMATION
DEVICE ZXMC3A17DN8TA ZXMC3A17DN8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
PINOUT
DEVICE MARKING
ZXMC
3A17 Top View
ISSUE 1 - OCTOBER 2005 1
SEMICONDUCTORS
ZXMC3A17DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = 10V; T A =25°C) (b)(d) (V GS = 10V; T A =70°C) (b)(d) (V GS = 10V; T A =25°C) (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C Linear Derating Factor Power Dissipation at T A =25°C (a) (e) Linear Derating Factor Power Dissipation at T A =25°C (b) (d) Linear Derating Factor Operating and Storage Temperature Range PD PD T j , T stg
(a) (d) (b)
ADVANCE INFORMATION
SYMBOL V DSS V GS ID
N-channel 30 ±20 5.4 4.3 4.1 23 2.6...
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