ZXMHC6A07T8

ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low On - Resistance Fast switching speed Low threshold Low gate drive www.DataSheet4U.com SM8 S1 G1 S4 G4 SM8 package D1, D2 D3, D4 APPLICATIONS Motor drive G2 S2 S3 G3 ORDERING INFORMATION PINOUT DIAGRAM DEVICE ZXMHC6A07T8TA ZXMHC6A07T8TC REEL SIZE 7’‘ 13’‘ TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units DEVICE MARKING ZXMH C6A07 Top View ISSUE 1 - JULY 2004 1 SEMICONDUCTORS ZXMHC6A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 Њ C (b)(d) @V GS =10V; T A =70 Њ C (b)(d) @V GS =10V; T A =25 Њ C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a)(d) Linear Derating Factor Power Dissipation at T A =25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range (b) SYMBOL V DSS V GS ID N-Channel 60 Ϯ 20 1.8 1.4 1.6 8.7 2.3 8.7 P-Channel -60 Ϯ 20 -1.5 -1.2 -1.3 -7.5 -2.1 -7.5 UNIT V V A A A A A W mW/°C W mW/°C °C I DM IS I SM...