COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
ZXMHC6A07T8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= ...
Description
ZXMHC6A07T8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low On - Resistance Fast switching speed Low threshold Low gate drive
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SM8
S1 G1 S4 G4
SM8 package
D1, D2
D3, D4
APPLICATIONS
Motor drive
G2 S2 S3
G3
ORDERING INFORMATION PINOUT DIAGRAM
DEVICE ZXMHC6A07T8TA ZXMHC6A07T8TC REEL SIZE 7’‘ 13’‘ TAPE WIDTH 12mm 12mm QUANTITY PER REEL
1000 units 4000 units
DEVICE MARKING
ZXMH
C6A07
Top View
ISSUE 1 - JULY 2004 1
SEMICONDUCTORS
ZXMHC6A07T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 Њ C (b)(d) @V GS =10V; T A =70 Њ C (b)(d) @V GS =10V; T A =25 Њ C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a)(d) Linear Derating Factor Power Dissipation at T A =25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range
(b)
SYMBOL V DSS V GS ID
N-Channel 60 Ϯ 20 1.8 1.4 1.6 8.7 2.3 8.7
P-Channel -60 Ϯ 20 -1.5 -1.2 -1.3 -7.5 -2.1 -7.5
UNIT V V A A A A A W mW/°C W mW/°C °C
I DM IS I SM...
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