Logic N-Channel MOSFET
SemiWell Semiconductor
SFS9410
Logic N-Channel MOSFET
Features
■
RDS(on) (Max 0.028Ω )@VGS=10V RDS(on) (Max 0.042Ω )@...
Description
SemiWell Semiconductor
SFS9410
Logic N-Channel MOSFET
Features
■
RDS(on) (Max 0.028Ω )@VGS=10V RDS(on) (Max 0.042Ω )@VGS=4.5V Gate Charge (Typical 18nC) Maximum Junction Temperature Range (150°C) Available in Tape and Reel
Symbol
D D D D
5 6 7 8
4 3 2 1
G S S S
■ ■ ■
General Description
This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for power management circuit or DC-DC converter.
8-SOIC
D D D
D
S
S
S
G
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Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TA = 25°C) Drain Current Pulsed Gate to Source Voltage Total Power Dissipation Single Operation (TA=25°C) Total Power Dissipation Single Operation (TA=70°C) Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 1)
Parameter
Value
30 7.3 20
Units
V A A V W W °C °C
±20
2.5 1.6 - 55 ~ 150 300
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
(Note 4)
Value Min.
-
Typ.
-
Max.
50
Units
°C/W
January, 2003. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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SFS9410
Electrical Characteristics
Symbol Off Characteristics
BVDSS Δ BVD...
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