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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
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PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package
Product specification 2004 Mar 23
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
FEATURES • Uni-directional ESD protection of up to five lines • Bi-directional ESD protection of up to four lines • Low diode capacitance • Maximum peak pulse power: Ppp = 25 W at tp = 8/20µs • Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V • ESD protection > 20 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs. PINNING APPLICATIONS • Cellular handsets and accessories • Portable electronics • Computers and peripherals • Communications systems • Audio and video equipment.
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PESD3V3L5UV; PESD5V0L5UV
QUICK REFERENCE DATA SYMBOL VRWM PARAMETER reverse standoff voltage PESD3V3L5UV PESD5V0L5UV Cd diode capacitance PESD3V3L5UV PESD5V0L5UV 22 16 pF pF 3.3 5 V V VALUE UNIT
number of protected lines 5
PIN 1 2 3 4 5 6 cathode 1
DESCRIPTION common anode cathode 2 cathode 3 cathode 4 cathode 5
DESCRIPTION Low capacitance 5-fold ESD protection array in the ultra small SOT666 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD). MARKING TYPE NUMBER PESD3V3L5UV PESD5V0L5UV Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3L5UV PESD5V0L5UV − − DESCRIPTION plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads VERSION SOT666 SOT666 Fig.1 Simplified outline (SOT666) and symbol. MARKING CODE(1) *E1 *E2
1 2 3
001aaa213 sym011
6
5
4 1 3 4 5 6 2
2004 Mar 23
2
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode Ppp Ipp Tj Tamb Tstg Notes 1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.2. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. ESD maximum ratings SYMBOL Per diode ESD
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PESD3V3L5UV; PESD5V0L5UV
PARAMETER
CONDITIONS 8/20 µs pulse; notes 1 and 2 8/20 µs pulse; notes 1 and 2 − − −
MIN.
MAX.
UNIT
peak pulse power peak pulse current junction temperature operation ambient temperature storage temperature
25 2.5 150 +150 +150
W A °C °C °C
−65 −65
PARAMETER
CONDITIONS
VALUE
UNIT
electrostatic discharge capability
IEC 61000-4-2 (contact discharge); notes 1 and 2 HBM MIL-Std 883
20 10
kV kV
Notes 1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses; see Fig.3. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. ESD standards compliance ESD STANDARD IEC 61000-4-2, level 4 (ESD) HBM MIL-Std 883, class 3 > 4 kV CONDITIONS > 15 kV (air); > 8 kV (contact)
2004 Mar 23
3
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
PESD3V3L5UV; PESD5V0L5UV
handbook, halfpage
120
MLE218
001aaa191
Ipp
Ipp (%)
100 % Ipp; 8 µs
100 % 90 %
80
e−t 50 % Ipp; 20 µs
40
10 %
0 0 10 20 30 t (µs) 40
tr = 0.7 to 1 ns 30 ns 60 ns
t
Fig.2
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8/20 µs pulse waveform according to IEC 61000-4-5.
Fig.3
Electrostatic Discharge (ESD) pulse waveform according to IEC 61000-4-2.
2004 Mar 23
4
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VRWM reverse stand-off voltage PESD3V3L5UV PESD5V0L5UV IRM reverse leakage current PESD3V3L5UV PESD5V0L5UV VBR breakdown voltage PESD3V3L5UV PESD5V0L5UV Cd diode capacitance PESD3V3L5UV PESD5V0L5UV VCL(R) clamping voltage PESD3V3L5UV
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PESD3V3L5UV; PESD5V0L5UV
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
− − VRWM = 3.3 V VRWM = 5 V IR = 1 mA 5.3 6.4 f = 1 MHz; VR = 0 V; see Fig.5 − − notes 1 and 2 Ipp = 1 A Ipp = 2.5 A Ipp = 1 A Ipp = 2.5 A IR = 1 mA − − − − − − − −
− − 75 5 5.6 6.8 22 16 − − − − − −
3.3 5 300 25 5.9 7.2 28 19 10 12 10 12 200 100
V V nA nA V V pF pF V V V V Ω Ω
PESD5V0L5UV rdiff differential resistance PESD3V3L5UV PESD5V0L5UV Notes
1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.2. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.
2004 Mar 23
5
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection diode arrays in SOT666 package
GRAPHICAL DATA
001aaa208
PESD3V3L5UV; PESD5V0L5UV
102
001aaa209
Ppp(Tj) Ppp(Tj =25°C) 1.0
Ppp (W) 0.8
10
0.6
0.4
0.2
1 1 10
102
103
t p (µs)
104
0 0 50 100 Tj (°C) 150
Tamb = 25 °C. Ipp = 8/20 µs exponentially decaying waveform; see Fig.2.
Fig.5 Fig.4
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Pe.