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PESD3V3L5UV Dataheets PDF



Part Number PESD3V3L5UV
Manufacturers NXP
Logo NXP
Description (PESD3V3L5UV / PESD5V0L5UV) Low capacitance 5-fold ESD protection diode arrays
Datasheet PESD3V3L5UV DatasheetPESD3V3L5UV Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 www.DataSheet4U.com PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package FEATURES • Uni-directional ESD protection of up to five lines • Bi-directional ESD protection of up to four lines • Low diode capacitance • Maximum peak pulse power: Ppp = 25 W at tp = 8/20µs.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 www.DataSheet4U.com PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package FEATURES • Uni-directional ESD protection of up to five lines • Bi-directional ESD protection of up to four lines • Low diode capacitance • Maximum peak pulse power: Ppp = 25 W at tp = 8/20µs • Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V • ESD protection > 20 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs. PINNING APPLICATIONS • Cellular handsets and accessories • Portable electronics • Computers and peripherals • Communications systems • Audio and video equipment. www.DataSheet4U.com PESD3V3L5UV; PESD5V0L5UV QUICK REFERENCE DATA SYMBOL VRWM PARAMETER reverse standoff voltage PESD3V3L5UV PESD5V0L5UV Cd diode capacitance PESD3V3L5UV PESD5V0L5UV 22 16 pF pF 3.3 5 V V VALUE UNIT number of protected lines 5 PIN 1 2 3 4 5 6 cathode 1 DESCRIPTION common anode cathode 2 cathode 3 cathode 4 cathode 5 DESCRIPTION Low capacitance 5-fold ESD protection array in the ultra small SOT666 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD). MARKING TYPE NUMBER PESD3V3L5UV PESD5V0L5UV Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3L5UV PESD5V0L5UV − − DESCRIPTION plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads VERSION SOT666 SOT666 Fig.1 Simplified outline (SOT666) and symbol. MARKING CODE(1) *E1 *E2 1 2 3 001aaa213 sym011 6 5 4 1 3 4 5 6 2 2004 Mar 23 2 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode Ppp Ipp Tj Tamb Tstg Notes 1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.2. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. ESD maximum ratings SYMBOL Per diode ESD www.DataSheet4U.com PESD3V3L5UV; PESD5V0L5UV PARAMETER CONDITIONS 8/20 µs pulse; notes 1 and 2 8/20 µs pulse; notes 1 and 2 − − − MIN. MAX. UNIT peak pulse power peak pulse current junction temperature operation ambient temperature storage temperature 25 2.5 150 +150 +150 W A °C °C °C −65 −65 PARAMETER CONDITIONS VALUE UNIT electrostatic discharge capability IEC 61000-4-2 (contact discharge); notes 1 and 2 HBM MIL-Std 883 20 10 kV kV Notes 1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses; see Fig.3. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. ESD standards compliance ESD STANDARD IEC 61000-4-2, level 4 (ESD) HBM MIL-Std 883, class 3 > 4 kV CONDITIONS > 15 kV (air); > 8 kV (contact) 2004 Mar 23 3 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package PESD3V3L5UV; PESD5V0L5UV handbook, halfpage 120 MLE218 001aaa191 Ipp Ipp (%) 100 % Ipp; 8 µs 100 % 90 % 80 e−t 50 % Ipp; 20 µs 40 10 % 0 0 10 20 30 t (µs) 40 tr = 0.7 to 1 ns 30 ns 60 ns t Fig.2 www.DataSheet4U.com 8/20 µs pulse waveform according to IEC 61000-4-5. Fig.3 Electrostatic Discharge (ESD) pulse waveform according to IEC 61000-4-2. 2004 Mar 23 4 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VRWM reverse stand-off voltage PESD3V3L5UV PESD5V0L5UV IRM reverse leakage current PESD3V3L5UV PESD5V0L5UV VBR breakdown voltage PESD3V3L5UV PESD5V0L5UV Cd diode capacitance PESD3V3L5UV PESD5V0L5UV VCL(R) clamping voltage PESD3V3L5UV www.DataSheet4U.com PESD3V3L5UV; PESD5V0L5UV PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − VRWM = 3.3 V VRWM = 5 V IR = 1 mA 5.3 6.4 f = 1 MHz; VR = 0 V; see Fig.5 − − notes 1 and 2 Ipp = 1 A Ipp = 2.5 A Ipp = 1 A Ipp = 2.5 A IR = 1 mA − − − − − − − − − − 75 5 5.6 6.8 22 16 − − − − − − 3.3 5 300 25 5.9 7.2 28 19 10 12 10 12 200 100 V V nA nA V V pF pF V V V V Ω Ω PESD5V0L5UV rdiff differential resistance PESD3V3L5UV PESD5V0L5UV Notes 1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.2. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. 2004 Mar 23 5 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package GRAPHICAL DATA 001aaa208 PESD3V3L5UV; PESD5V0L5UV 102 001aaa209 Ppp(Tj) Ppp(Tj =25°C) 1.0 Ppp (W) 0.8 10 0.6 0.4 0.2 1 1 10 102 103 t p (µs) 104 0 0 50 100 Tj (°C) 150 Tamb = 25 °C. Ipp = 8/20 µs exponentially decaying waveform; see Fig.2. Fig.5 Fig.4 www.DataSheet4U.com Pe.


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