PESD5V0L5UY

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 www.DataSheet4U.com PESD3V3L5UY; PESD5V0L5UY Low capacitance 5-fold ESD protection diode arrays in SOT363 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT363 package FEATURES Uni-directional ESD protection of up to five lines Bi-directional ESD protection of up to four lines Low diode capacitance Maximum peak pulse power: Ppp = 25 W at tp = 8/20 µs Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A Ultra low leakage current: IRM = 8 nA at VRWM = 5 V ESD protection > 20 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs. PINNING APPLICATIONS Cellular handsets and accessories Portable electronics Computers and peripherals Communications systems Audio and video equipment. www.DataSheet4U.com PESD3V3L5UY; PESD5V0L5UY QUICK REFERENCE DATA SYMBOL VRWM PARAMETER reverse standoff voltage PESD3V3L5UY PESD5V0L5UY Cd diode capacitance PESD3V3L5UY PESD5V0L5UY 22 16 pF pF 3.3 5 V V VALUE UNIT number of protected lines 5 PIN 1 2 3 4 5 6 cathode 1 DESCRIPTION common anode cathode 2 cathode 3 cathode 4 cathode 5 DESCRIPTION Low capacitance 5-fold ESD protection array in the very small SOT363 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD). MARKING TYPE NUMBER PESD3V3L5UY PESD5V0L5UY Note 1. ...