PBSS5350SS

PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS5350SS SOT96-1 Name SO8 NPN/PNP complement PBSS4350SPN NPN/NPN complement PBSS4350SS Type number 1.2 Features I I I I I www.DataSheet4U.com Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Dual low power switches (e.g. motors, fans) I Automotive 1.4 Quick reference data Table 2. Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = −2 A; IB = −200 mA [1] Symbol Parameter Per transistor VCEO IC ICM RCEsat [1] Min - Typ 95 Max −50 −2.7 −5 140 Unit V A A mΩ collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Pulse test: tp ≤ 300 µs; δ ≤ 0.02. NXP Semiconductors PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor 2. Pinning information Table 3. Pin 1 2 3 4 5 6 7 8 Pinning Description emitter TR1 base TR1 emitter TR2 TR1 TR2 Simplified outline 8 5 Symbol 8 7 6 5 base TR2 collector TR2 collector TR2 collector TR1 collector TR1 1 4 1 2 3 4...