STC05DE120HV

STC05DE120HV Hybrid emitter switched bipolar transistor ESBT® 1200V - 5A - 0.18 W Target Specification General features Table 1. VCS(ON) 0.9V ■ General features IC 5A RCS(ON) 0.18Ω High voltage / low current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150kHz Squared RBSOA, up to 1200V Very low CISS driven by RG = 47Ω In compliance with the 2002/93/EC European Directive 1 ■ ■ ■ ■ ■ 23 4 TO247-4L HV Internal schematic diagrams Description www.DataSheet4U.com The STC05DE120HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC05DE120HV is designed for use in aux flyback smps for any three phase application. Applications ■ Aux SMPS for three phase mains Order codes Part Number STC05DE120HV Marking C05DE120HV Package TO247-4L HV Packaging Tube May 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. Electrical ratings STC05DE120HV 1 Electrical ratings Table 2. Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Absolute maximum ratings Parameter Collector-source voltage (V BS =VGS =0V) Base-source voltage (IC =0, VGS =0V) Source-base voltage (IC =0, VGS =0V) Gate-source voltage Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 1ms) Total dissipation at T c ≤ 25°...