STE70IE120

STE70IE120 Monolithic Emitter Switched Bipolar Transistor ESBT® 1200 V - 70 A - 0.014 Ω Power Module Target data General features VCS(ON) 1V ■ IC 70A RCS(ON) 0.014W ISOTOP High voltage / high current Cascode configuration Ultra low equivalent on resistance Very fast-switch, up to 150 kHz Ultra low CISS Low dynamic VCS(ON) ■ ■ ■ ■ Internal schematic diagram Description www.DataSheet4U.com The STE70DE120 is manufactured in monolithic structure, to be used in industrial applications. Applications ■ ■ Solar Welding Order codes Part number STE70IE120 Marking E70IE120 Package ISOTOP Packaging Tube May 2007 Rev 1 1/7 www.st.com 7 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. Electrical ratings STE70IE120 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot TSTG TJ VISO Parameter Collector-source voltage (VBS = VGS = 0V) Base-source voltage (IC = 0, VGS = 0V) Source-base voltage (IC = 0, VGS = 0V) Gate-source voltage Collector current Collector peak current (tp < 5ms) Base current Base peak current (tP < 1ms) Total dissipation at TC = 25°C Storage temperature Maximum operating junction temperature Insulation withstand voltage (AC-RMS) from all four leads to external heatsink Value 1200 40 12 Unit V V V V A A A A W °C °C V ± 20 70 150 20 70 TBD -65 to 150 150 2500 www.DataSheet4U.com 1.1 Thermal data Table 2. Thermal data Symbol RthJ...