M58WR064KU

M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 86 MHz – Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time – 10 µs by Word typical for Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options Memory blocks – Multiple Bank memory array: 4 Mbit Banks – Parameter Blocks (top or bottom location) Dual operations – Program Erase in one Bank while Read in others – No delay between Read and Write operations Block locking – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down Security – 128 bit user programmable OTP cells – 64 bit unique device number Common Flash Interface (CFI) 100,000 program/erase cycles per block ■ ■ FBGA ■ ■ VFBGA44 (ZA) 7.5 × 5 mm ■ ■ www.DataSheet4U.com ■ ■ Electronic signature – Manufacturer Code: 20h – Top Device Code, M58WR016KU: 8823h M58WR032KU: 8828h M58WR064KU: 88C0h – Bottom Device Code, M58WR016KL: 8824h M58WR032KL: 8829h M58WR064KL: 88C1h ECOPACK® packages available ■ ■ ■ ■ May 2007 Rev 1 1/123 www.st.com 1 Contents M58WRxxxKU, M58WRxxxKL Contents 1 2 Description . . . . . . . . . . . . . . . . . . . . ...