BS107PT

www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=28Ω BS107PT D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 ±20 500 -55 to +150 UNIT V A A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Drain-Source Breakdown Voltage Gate Body Leakage Drain Cut-Off Current Drain Cut-Off Current Static Drain-Source on-State Resistance SYMBOL BVDSS IGSS IDSS IDSX RDS(on) 15 MIN. 200 TYP. 230 MAX. UNIT V CONDITIONS. ID=100µA, VGS=0V VGS=15V, VDS=0V VGS=0V, VDS=130V VGS=0.2V, VDS=70V VGS=2.6V, ID=20mA* VGS=2.7V, ID=100mA* 10 30 1 28 30 nA nA µA Ω Ω * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-24 BS107PT TYPICAL CHARACTERISTICS ID(On) - On-State Drain Current (Amps) 1.2 ID(On) -On-State Drain Current (Amps) 1.0 0.8 0.6 0.4 0.2 VGS= 10V 6V 0.5 0.4 0.3 VGS= 10V 6V 4V 4V 0.2 3V 0.1 3V 0 0 20 40 60 80 100 0 0 2 4 6 8 10 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics VDS-Drain Source Voltage (Volts) Saturation Characteristics VDS-Drain Source Voltage (Volts) 2.5 30 2.0 1.5 ID= 100mA 1.0 50mA 25mA 0 2 2.5 3.0 3.5 4.0 4.5 20 ID= 500mA 10 250mA 0 0 2 4 6 8 10 I00mA 0.5 VGS-Gate ...