SWITCHING TRANSISTORS. BSS80B Datasheet

BSS80B TRANSISTORS. Datasheet pdf. Equivalent

Part BSS80B
Description (BSS80B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS
Feature www.DataSheet4U.com SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 PARTMARKI.
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Datasheet
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BSS80B
SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 2 – SEPTEMBER 95 7
PARTMARKING DETAIL — BSS80B - CH
BSS80C - CJ
BSS80B
BSS80C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
PTOT
tj:tstg
SOT23
VALUE
-60
-40
-5
-800
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO -60
Collector-Emitter
Breakdown Voltage
V(BR)CEO -40
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
Collector Cut-Off
Current
ICBO
-10
-10
Emitter Cut-Off
Current
IEBO
-10
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.4
-1.6
Static Forward
Current
Transfer Ratio
BSS80B hFE
BSS80C
40 120
100 300
Transition Frequency
fT 200
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cobo
td
tr
ts
tf
8
10
40
80
30
UNIT
V
V
nA
µA
nA
mV
V
MHz
pF
ns
ns
ns
ns
CONDITIONS.
IC=-10µA
IC=-10mA
IE=-10mA
VCB=-50V,
VCB=-50V,
Ta=150oC
VBE=-3V
IC=-150mA,VCE=-10V
IC=-150mA,VCE=-10V
IC=150mA,VCE=10V
IC=150mA,VCE=10V
VCE=-20V,IC=-50mA
f=100MHz
VCB=-10V,f=1MHz
VCC=-30V, IC=-150mA
IB1=-IB2=-15mA
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