BUL47A

BUL47A MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) www.DataSheet4U.com SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI–REL OPTIONS EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. FEATURES Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages. TO3 (TO-204AA) Pin 1 – Base Pin 2 – Emitter Case is Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC Ptot Tstg Rth Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range Thermal Resistance (junction-case) 600V 300V 10V 40A 200W –65 to 175°C 0.75°CW Semelab Plc reserves the right to change test conditions, parameter limits and package dimensio...