FXT618

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 – JULY 1995 FEATURES * 10A Peak pulse current * Excellent hFE characteristics up to10A (pulsed) * Extremely low saturation voltage e.g. 7mV typ. * IC cont 3.5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX718 www.DataSheet4U.com ZTX618 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Practical Power Dissipation* Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptotp Ptot Tj:Tstg VALUE 20 20 5 10 3.5 500 1.5 1 -55 to +200 UNIT V V V A A mA W W °C * Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX618 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 7 80 210 0.93 0.86 200 300 170 40 100 400 450 300 85 140 23 170 400 30 MHz pF ns ns MIN. 20 20 5 TYP. 100 27 8.3 100 100 100 15 150 255 1.05 1.0 MAX. UNIT V V V n...