FMMT5551

www.DataSheet4U.com SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 4 - NOVEMBER 1996 7 PARTMARKING DETAILS FMMT5550 – 1FZ FMMT5551 – ZG1 FMMT5550 FMMT5551 C B E COMPLEMENTARY TYPES - FMMT5550 – FMMT5400 FMMT5551 – FMMT5401 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C SYMBOL VCBO VCEO VEBO IC Ptot FMMT5550 FMMT5551 160 140 6 600 330 180 160 6 600 330 UNIT V V V mA mW °C Operating and Storage Temperature Range Tj:Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMT5550 PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Static Forward Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Small Signal Noise Figure SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 160 140 6 100 100 60 60 20 80 80 30 MAX. MIN. 180 160 6 FMMT5551 MAX. UNIT V V V µA CONDITIONS. IC=100µ A IC=1mA IE=10µ A* VCB=100V VCB=100V, TA=100°C VCB=120V VCB=120V, TA=100°C IC=1mA, VCE=5V IC=10mA, VCE=5V IC=50mA, VCE=5V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=1mA, VCE=10V f=1KHz † nA 50 50 250 nA µA hFE VCE(sat) VBE(sat) fT Cobo hfe NF 250 0.15 0.25 1.0 1.2 0.15 V 0.20 V 1.0 V 1.2 V 100 300 MHz 6.0 pF 50 260 8 dB 100 300 6.0 50 200 ...