IRF2903ZLPBF

PD - 96098A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRF2903ZSPbF IRF2903ZLPbF HEXFET® Power MOSFET D VDSS = 30V G RDS(on) = 2.4mΩ S ID = 75A D D S D G D2Pak S D G TO-262 G Absolute Maximum Ratings Gate Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor d VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) IAR EAR h Single Pulse Avalanche Energy Tested Value Ù Avalanche Current g Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds D Drain S Source Max. 235 166 75 1020 231 1.54 ± 20 231 820 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) Units A W W/°C...