Document
TEPT5600
Vishay Semiconductors
Ambient Light Sensor
Description
TEPT5600 is a silicon NPN epitaxial planar photo transistor in a standard T-1 3/4" plastic package. Peak of responsivity is in the visible spectrum. Infrared spectrum is suppressed.
Features
• • • • Responsivity adapted to human eye Wide angle of half sensitivity ϕ = ± 20° Lead (Pb)-free component Component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
94 8390
e4
Applications
• Replacement of cadmium sulfide (CdS) photo resistors • Ambient light sensor
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter
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Test condition
Symbol VCEO VECO IC
Value 6 1.5 20 100 100 - 40 to + 85 - 40 to + 100 260 450
Unit V V mA mW °C °C °C °C K/W
Collector emitter voltage Emitter collector voltage Collector current Total power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient 2 mm distance to package, t ≤ 3 s Tamb ≤ 55 °C
Ptot Tj Tamb Tstg Tsd RthJA
Basic Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Collector emitter breakdown voltage Collector dark current Collector-emitter capacitance Photo current Test condition IC = 0.1 mA VCE = 5 V, E = 0 VCE = 0 V, f = 1 MHz, E = 0 Ev = 20 lx, CIE illuminant A, VCE = 5 V Ev = 100 lx, CIE illuminant A, VCE = 5 V Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Document Number 84768 Rev. 1.3, 28-Nov-06 Symbol VCEO ICEO CCEO IPCE IPCE ϕ λp λ0.1 25 Min 6 3 16 70 350 ± 20 570 360 to 970 140 50 Typ. Max Unit V nA pF µA µA deg nm nm www.vishay.com 1
TEPT5600
Vishay Semiconductors Typical Characteristics
Tamb = 25 °C, unless otherwise specified
10 -6
VCE=5 V
10000
ICEO - Collector Dark Current (A)
10 -7 10 -8 10 -9 10 -10 10 -11 10 -12 10 -13 - 40 10 10
20204
I PCE - Photo Current (µA)
1000
100
- 20
19558
0 20 40 60 80 Tamb - Ambient Temperature (°C)
100
100 E V - Illuminance (lx)
1000
Figure 1. Collector Dark Current vs. Ambient Temperature
Figure 4. Photo Current vs. Illuminance
CCE0 - Collector Emitter Capacitance (pF)
2.2 2.0 IPCE rel - Relative Photo Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
19559
25 f = 1 MHz 20 15 10
5
VCE= 5 V, T = 2856 K
- 40
- 20
0 20 40 60 80 Tamb - Ambient Temperature (°C)
100
0 0.1
19762
1.0 10.0 VCE - Collector Emitter Voltage (V)
Figure 2. Relative Photo Current vs. Ambient Temperature
Figure 5. Collector Emitter Capacitance vs. Collector Emitter Voltage
700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 0
20205
200 lx
S ( λ) rel - Relative Spectral Sensitivity
1.2 1.0 0.8 0.6 0.4 0.2 0.0 300
I PCE - Photo Current (µA)
100 lx
50 lx 20 lx
2 1 3 4 VCE - Collector Emitter Voltage (V)
5
400
500
600 700
800
900 1000 1100
18465
λ - Wavelength (nm)
Figure 3. Photo Current vs. Collector Emitter Voltage
Figure 6. Relative Spectral Sensitivity vs. Wavelength
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Document Number 84768 Rev. 1.3, 28-Nov-06
TEPT5600
Vishay Semiconductors
0°
10°
20° 30°
Srel - Relative Sensitivity
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6
94 8624
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
Package Dimensions
96 12199
Document Number 84768 Rev. 1.3, 28-Nov-06
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TEPT5600
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in diff.