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TEPT5600 Dataheets PDF



Part Number TEPT5600
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Ambient Light Sensor
Datasheet TEPT5600 DatasheetTEPT5600 Datasheet (PDF)

TEPT5600 Vishay Semiconductors Ambient Light Sensor Description TEPT5600 is a silicon NPN epitaxial planar photo transistor in a standard T-1 3/4" plastic package. Peak of responsivity is in the visible spectrum. Infrared spectrum is suppressed. Features • • • • Responsivity adapted to human eye Wide angle of half sensitivity ϕ = ± 20° Lead (Pb)-free component Component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC 94 8390 e4 Applications • Replacement of cadmium sulfide (CdS) pho.

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TEPT5600 Vishay Semiconductors Ambient Light Sensor Description TEPT5600 is a silicon NPN epitaxial planar photo transistor in a standard T-1 3/4" plastic package. Peak of responsivity is in the visible spectrum. Infrared spectrum is suppressed. Features • • • • Responsivity adapted to human eye Wide angle of half sensitivity ϕ = ± 20° Lead (Pb)-free component Component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC 94 8390 e4 Applications • Replacement of cadmium sulfide (CdS) photo resistors • Ambient light sensor Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter www.DataSheet4U.com Test condition Symbol VCEO VECO IC Value 6 1.5 20 100 100 - 40 to + 85 - 40 to + 100 260 450 Unit V V mA mW °C °C °C °C K/W Collector emitter voltage Emitter collector voltage Collector current Total power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient 2 mm distance to package, t ≤ 3 s Tamb ≤ 55 °C Ptot Tj Tamb Tstg Tsd RthJA Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter Collector emitter breakdown voltage Collector dark current Collector-emitter capacitance Photo current Test condition IC = 0.1 mA VCE = 5 V, E = 0 VCE = 0 V, f = 1 MHz, E = 0 Ev = 20 lx, CIE illuminant A, VCE = 5 V Ev = 100 lx, CIE illuminant A, VCE = 5 V Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Document Number 84768 Rev. 1.3, 28-Nov-06 Symbol VCEO ICEO CCEO IPCE IPCE ϕ λp λ0.1 25 Min 6 3 16 70 350 ± 20 570 360 to 970 140 50 Typ. Max Unit V nA pF µA µA deg nm nm www.vishay.com 1 TEPT5600 Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 10 -6 VCE=5 V 10000 ICEO - Collector Dark Current (A) 10 -7 10 -8 10 -9 10 -10 10 -11 10 -12 10 -13 - 40 10 10 20204 I PCE - Photo Current (µA) 1000 100 - 20 19558 0 20 40 60 80 Tamb - Ambient Temperature (°C) 100 100 E V - Illuminance (lx) 1000 Figure 1. Collector Dark Current vs. Ambient Temperature Figure 4. Photo Current vs. Illuminance CCE0 - Collector Emitter Capacitance (pF) 2.2 2.0 IPCE rel - Relative Photo Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 19559 25 f = 1 MHz 20 15 10 5 VCE= 5 V, T = 2856 K - 40 - 20 0 20 40 60 80 Tamb - Ambient Temperature (°C) 100 0 0.1 19762 1.0 10.0 VCE - Collector Emitter Voltage (V) Figure 2. Relative Photo Current vs. Ambient Temperature Figure 5. Collector Emitter Capacitance vs. Collector Emitter Voltage 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 0 20205 200 lx S ( λ) rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0.0 300 I PCE - Photo Current (µA) 100 lx 50 lx 20 lx 2 1 3 4 VCE - Collector Emitter Voltage (V) 5 400 500 600 700 800 900 1000 1100 18465 λ - Wavelength (nm) Figure 3. Photo Current vs. Collector Emitter Voltage Figure 6. Relative Spectral Sensitivity vs. Wavelength www.vishay.com 2 Document Number 84768 Rev. 1.3, 28-Nov-06 TEPT5600 Vishay Semiconductors 0° 10° 20° 30° Srel - Relative Sensitivity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8624 Figure 7. Relative Radiant Sensitivity vs. Angular Displacement Package Dimensions 96 12199 Document Number 84768 Rev. 1.3, 28-Nov-06 www.vishay.com 3 TEPT5600 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in diff.


TDA7266SA TEPT5600 U6101B


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